收藏本站
Si4230DY
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
V GS(th) Temperature Coefficient
V DS
Δ V DS /T J
Δ V GS(th) /T J
V GS = 0 V, I D = 250 μA
I D = 250 μA
30
32
-6
V
mV/°C
Gate Threshold Voltage
V GS(th)
V DS = V GS , I D = 250 μA
1.0
3.0
V
Gate Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current b
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = ± 20 V
V DS = 30 V, V GS = 0 V
V DS = 30 V, V GS = 0 V, T J = 55 °C
V DS = 5 V, V GS = 10 V
20
100
1
10
nA
μA
A
Drain-Source On-State Resistance b
Forward Transconductance b
R DS(on)
g fs
V GS = 10 V, I D = 8 A
V GS = 4.5 V, I D = 5 A
V DS = 15 V, I D = 8 A
0.0172
0.0205
29
0.0205
0.026
Ω
S
Dynamic a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
N-Channel
V DS = 15 V, V GS = 0 V, f = 1 MHz
950
155
65
pF
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q g
Q gs
Q gd
V DS = 15 V, V GS = 10 V, I D = 8 A
N-Channel
V DS = 15 V, V GS = 4.5 V, I D = 8 A
16.5
7.3
2.7
2.1
25
11
nC
Gate Resistance
R g
f = 1 MHz
0.2
1.2
2.4
Ω
Turn-On Delay Time
t d(on)
17
35
Rise Time
Turn-Off Delay Time
t r
t d(off)
N-Channel
V DD = 15 V, R L = 3 Ω
I D ? 5 A, V GEN = 4.5 V, R g = 1 Ω
12
18
24
35
Fall Time
Turn-On Delay Time
t f
t d(on)
10
9
20
18
ns
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(off)
t f
N-Channel
V DD = 15 V, R L = 3 Ω
I D ? 5 A, V GEN = 10 V, R g = 1 Ω
11
18
8
20
35
16
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current a
I S
I SM
T C = 25 °C
2.6
30
A
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
V SD
t rr
Q rr
t a
t b
I S = 1 A
N-Channel
I F = 5 A, dI/dt = 100 A/μs, T J = 25 °C
0.74
17
9
10
7
1.2
34
18
V
ns
nC
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 68983
S-82660-Rev. A, 03-Nov-08
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
SI4310BDY-T1-E3 MOSFET N-CH/SCHOTTKY 30V 14SOIC
SI4313-B1-FM IC RX FSK 315-915MHZ 20VQFN
SI4320-J1-FT IC RCVR FSK 915MHZ 5.4V 16-TSSOP
SI4322-A0-FT IC RX FSK UNI 868/915MHZ 16TSSOP
SI4324DY-T1-GE3 MOSFET N-CH D-S 30V 8-SOIC
SI4330-B1-FM IC RCVR ISM 960MHZ 3.6V 20-QFN
SI4354DY-T1-GE3 MOSFET N-CH D-S 30V 8-SOIC
SI4355-B1A-FM IC EZRADIO FM RECEIVER SI4355
相关代理商/技术参数
SI4231-A0-FM 功能描述:射频发射器 Transmitters - IA4231 RoHS:否 制造商:Micrel 类型:ASK Transmitter 封装 / 箱体:SOT-23-6 工作频率:300 MHz to 450 MHz 封装:Reel
SI4232-A0-FM 功能描述:射频发射器 Transmitters - IA4232 RoHS:否 制造商:Micrel 类型:ASK Transmitter 封装 / 箱体:SOT-23-6 工作频率:300 MHz to 450 MHz 封装:Reel
SI426DQ 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 2.5-V (G-S) Rated MOSFET
SI4276DY 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 30 V (D-S) MOSFET
SI4276DY-T1-E3 功能描述:MOSFET 2N-CH 30V 8A SO8 RoHS:是 类别:分离式半导体产品 >> FET - 阵列 系列:TrenchFET® 产品目录绘图:8-SOIC Mosfet Package 标准包装:1 系列:- FET 型:2 个 N 沟道（双） FET 特点:逻辑电平门 漏极至源极电压(Vdss):60V 电流 - 连续漏极(Id) @ 25° C:3A 开态Rds（最大）@ Id, Vgs @ 25° C:75 毫欧 @ 4.6A，10V Id 时的 Vgs(th)（最大）:3V @ 250µA 闸电荷(Qg) @ Vgs:20nC @ 10V 输入电容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安装类型:表面贴装 封装/外壳:PowerPAK? SO-8 供应商设备封装:PowerPAK? SO-8 包装:Digi-Reel® 产品目录页面:1664 (CN2011-ZH PDF) 其它名称:SI7948DP-T1-GE3DKR
SI4276DY-T1-GE3 功能描述:MOSFET 30 Volts 8 Amps 2.8 Watts RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4286DY 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 40 V (D-S) MOSFET
Si4286DY-T1-GE3 功能描述:MOSFET 40 Volts 7 Amps 2.9 Watts RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube